Method for fabricating glass substrate package

ABSTRACT

A substrate comprising a solid glass core having a first surface and a second surface opposed to the first surface; multiple conductors extending through the solid glass core beginning at the first surface and ending at the second surface, wherein one of the conductors has a third surface and a fourth surface, wherein the third surface and the first surface are substantially coplanar, wherein the second surface and the fourth surface are substantially coplanar, wherein one of the conductors comprise a copper-tungsten alloy material, wherein the solid glass core is directly contact with the conductor; and a first dielectric layer and a first metal layer formed at the first surface, wherein the first metal layer at the first surface is electrically coupled with one of the conductors.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of application Ser. No. 15/476,999,filed Apr. 1, 2017, which is continuation of application Ser. No.14/036,256, filed on Sep. 25, 2013, now U.S. Pat. No. 9,615,453, whichclaims the benefit of priority from U.S. Provisional Patent ApplicationNo. 61/705,649 filed on Sep. 26, 2012, all of which are incorporatedherein by reference in their entirety.

BACKGROUND OF THE DISCLOSURE Field of the Disclosure

The patent disclosure a method and structure to manufacture a glasssubstrate, and disclosed embodiments relate to one or more chip buildinga system on the glass substrate.

Brief Description of the Related Art

As is well known, microelectronic devices have a tendency to beminimized and thinned with its functional development and asemiconductor package mounted on a mother board is also following thetendency in order to realize a mounting of high integration.

When the geometric dimensions of the Integrated Circuits are scaleddown, the cost per die is decreased while some aspects of performanceare improved. The metal connections which connect the Integrated Circuitto other circuit or system components become of relative more importanceand have, with the further miniaturization of the IC, an increasinglynegative impact on the circuit performance. The parasitic capacitanceand resistance of the metal interconnections increase, which degradesthe chip performance significantly. Of most concern in this respect isthe voltage drop along the power and ground buses and the RC delay ofthe critical signal paths. Attempts to reduce the resistance by usingwider metal lines result in higher capacitance of these wires.

To solve this problem, the approach has been taken to develop lowresistance metal (such as copper) for the wires while low dielectricmaterials are used in between signal lines.

Increased Input-Output (IO) combined with increased demands for highperformance IC's has led to the development of Flip Chip Packages.Flip-chip technology fabricates bumps (typically Pb/Sn solders) on Alpads on chip and interconnect the bumps directly to the package media,which are usually ceramic or plastic based. The flip-chip is bonded facedown to the package medium through the shortest path. These technologiescan be applied not only to single-chip packaging, but also to higher orintegrated levels of packaging in which the packages are larger and tomore sophisticated substrates that accommodate several chips to formlarger functional units.

The flip-chip technique, using an area array, has the advantage ofachieving the highest density of interconnection to the device and avery low inductance interconnection to the package. However,pre-testability, post-bonding visual inspection, and TCE (TemperatureCoefficient of Expansion) matching to avoid solder bump fatigue arestill challenges.

Glass can be used as an interposer to bridge between one or more ICchips and a printed circuit board. In many respects, when used as aninterposer/substrate and without the requirement for active devices,glass can be a good substitute for a silicon interposer. The advantagesof glass in comparison to silicon as an interposer lie in its much lowermaterial cost. Glass also has a CTE closely matched to silicon, so thatreliability of interconnects, especially micro-bonds, can be expected tobe quite good. Glass has some disadvantages in comparison tosilicon—notably its lower thermal conductivity and the difficulty informing Through Glass Vias (TGV's). Both of these topics are discussedelsewhere in this patent.

SUMMARY OF THE DISCLOSURE

Embodiments of the present disclosure provide a substrate comprising asolid glass core having a first surface and a second surface opposed tothe first surface; multiple conductors extending through the solid glasscore beginning at the first surface and ending at the second surface,wherein one of the conductors has a third surface and a fourth surface,wherein the third surface and the first surface are substantiallycoplanar, wherein the second surface and the fourth surface aresubstantially coplanar, wherein one of the conductors comprise acopper-tungsten alloy material, wherein the solid glass core is directlycontact with the conductor; and a first dielectric layer and a firstmetal layer formed at the first surface, wherein the first metal layerat the first surface is electrically coupled with one of the conductors.

Embodiments of the present disclosure provide a substrate comprising asolid glass core having a first surface and a second surface opposed tothe first surface; multiple conductors extending through the solid glasscore beginning at the first surface and ending at the second surface,wherein one of the conductors has a third surface and a fourth surface,wherein the third surface and the first surface are substantiallycoplanar, wherein the second surface and the fourth surface aresubstantially coplanar, wherein one of the conductors comprise a firstmetal layer and a second metal layer coated the first metal layer,wherein the solid glass core is directly contact with the conductor; anda first dielectric layer and a third metal layer formed at the firstsurface, wherein the first third layer at the first surface iselectrically coupled with one of the conductors.

These, as well as other components, steps, features, benefits, andadvantages of the present disclosure, will now become clear from areview of the following detailed description of illustrativeembodiments, the accompanying drawings, and the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

The drawings disclose illustrative embodiments. They do not set forthall embodiments. Other embodiments may be used in addition or instead.Details that may be apparent or unnecessary may be omitted to save spaceor for more effective illustration. Conversely, some embodiments may bepracticed without all of the details that are disclosed. When the samenumeral appears in different drawings, it refers to the same or likecomponents or steps.

Aspects of the disclosure may be more fully understood from thefollowing description when read together with the accompanying drawings,which are to be regarded as illustrative in nature, and not as limiting.The drawings are not necessarily to scale, emphasis instead being placedon the principles of the disclosure.

FIG. 1 illustrates a three-dimensional view of a X-axis nets and aY-axis nets, in accordance with the present disclosure.

FIG. 2 illustrates a cross-section view of the X-axis nets and theY-axis nets, in accordance with the present disclosure.

FIG. 3 illustrates a cross-section view of the Z-axis traces crossed tothe X-axis nets and the Y-axis nets, in accordance with the presentdisclosure.

FIG. 4 illustrates a three-dimensional view of the Z-axis traces, X-axisnets and the Y-axis nets, in accordance with the present disclosure.

FIG. 5a-5i illustrate the shape and structure of the Z-axis traces, inaccordance with the present disclosure.

FIGS. 6-15 are illustrate a process of forming a glass substrate, inaccordance with the present disclosure.

FIGS. 16a-16d illustrate a top views of the glass substrate, inaccordance with the present disclosure.

FIGS. 17a-17d illustrate cross-section views of the glass substrate andthe metal plug, in accordance with the present disclosure.

FIGS. 18a-18t illustrate a process to form multiple traces on a topsurface and a bottom surface of the glass substrate, in accordance withthe present disclosure.

FIGS. 18u-18v illustrate cross-section views of multiple chips formed onthe glass substrate, in accordance with the present disclosure.

FIG. 18w illustrates a cross-section view of the metal bump, inaccordance with the present disclosure.

FIG. 18x illustrates a cross-section view of multiple chips formed on atop surface and bottom surface of the glass substrate, in accordancewith the present disclosure.

FIG. 18y illustrates a cross-section view of multiple chips and a 3D-ICpackage formed on a top surface and bottom surface of the glasssubstrate, in accordance with the present disclosure.

FIG. 18z illustrates a top views of the multiple chips on the glasssubstrate, in accordance with the present disclosure.

FIGS. 19a-19j illustrates a damascene process to form the metal layer onthe glass substrate, in accordance with the present disclosure.

FIGS. 20a-20i illustrates an embossing process to form the metal layeron the glass substrate, in accordance with the present disclosure.

FIG. 21 illustrates a cross-section view of the glass substrate formedon an OLED display substrate, in accordance with the present disclosure.

FIG. 22 illustrates a cross-section view of the glass substrate formedon a MEMs display substrate, in accordance with the present disclosure.

FIG. 23 illustrates a cross-section view of the glass substrate formedon a LCD display substrate, in accordance with the present disclosure.

While certain embodiments are depicted in the drawings, one skilled inthe art will appreciate that the embodiments depicted are illustrativeand that variations of those shown, as well as other embodimentsdescribed herein, may be envisioned and practiced within the scope ofthe present disclosure.

DETAILED DESCRIPTION OF THE DISCLOSURE

FIG. 1 illustrates a three-dimensional view of a net 2, 4, wherein thenet 4 is under the net 2, wherein the net 2 comprises multiple Y-axistraces 2 a and multiple X-axis traces 2 b under the Y-axis traces 2 a,and wherein the net 4 comprises multiple Y-axis traces 4 a and multipleX-axis traces 4 b under the Y-axis traces 4 a. Multiple gaps 3, 5 formin the net 2 and 4. Each of the traces 2 a, 2 b, 4 a and 4 b is easilymove to change the size of gaps 3 and gaps 5. The diameter (or width) oftraces 2 a, 2 b, 4 a and 4 b are the same, such as between 10 and 30micrometers, between 20 and 100 micrometers, between 40 and 150micrometers, between 50 and 200 micrometers, between 200 and 1000micrometers or between 500 and 10000 micrometers. The traces 2 a, 2 b, 4a and 4 b may be metal traces or polymer traces, such as copper traces,copper-gold alloy traces, copper-gold-palladium alloy traces,copper-gold-silver alloy traces, copper-platinum alloy traces,copper-iron alloy traces, copper-nickel alloy traces, copper-tungstentraces, tungsten traces, brass wires, zinc plated brass wires, stainlesswires, nickel plated stainless wires, phosphor bronze wires, copperplated the aluminum wires, aluminum traces, phenolic resin traces, epoxyresin traces, melamine-formaldehyde resin traces or polysiloxanes resintraces. The cross-section shape of traces 2 a, 2 b, 4 a and 4 b may be acircular shape, a Square shape, an oblong shape, a rectangle shape or aflat shape.

FIG. 2 illustrates a cross-section view of the net 2 and the net 4. Thegaps 3 and gaps 5 are aligned with each other.

Next, referring to FIG. 3, multiple metal traces 6 are crossed the net 2and the net 4 through the gaps 3 and gaps 5. The diameter (or width) ofmetal traces 6 is between 10 and 30 micrometers, between 20 and 100micrometers, between 40 and 150 micrometers, between 50 and 200micrometers, between 200 and 1000 micrometers or between 500 and 10000micrometers. The traces 6 may be metal traces, such as copper traces,copper-gold alloy traces, copper-gold-palladium alloy traces,copper-gold-silver alloy traces, copper-platinum alloy traces,copper-iron alloy traces, copper-nickel alloy traces, copper-tungstentraces, tungsten traces, brass wires, zinc plated brass wires, stainlesswires, nickel plated stainless wires, phosphor bronze wires, copperplated the aluminum wires, aluminum traces, titanium-containing layerplated the copper wires, tantalum-containing layer plated the copperwires. The cross-section shape of traces 6 may be a circular shape, asquare shape, an oblong shape, a rectangle shape or a flat shape. Thediameter (or width) of traces 6 may be the same with the traces 2 a, 2b, 4 a and 4 b or different with the traces 2 a, 2 b, 4 a and 4 b.

Furthermore, we proposed the material of the traces 6 is copper-tungstenalloy, wherein the copper in the copper-tungsten alloy is 50 percent andthe tungsten in the copper-tungsten alloy is 50 percent, the copper inthe copper-tungsten alloy is 60 percent and the tungsten in thecopper-tungsten alloy is 40 percent, the copper in the copper-tungstenalloy is 70 percent and the tungsten in the copper-tungsten alloy is 30percent, the copper in the copper-tungsten alloy is 80 percent and thetungsten in the copper-tungsten alloy is 20 percent, the copper in thecopper-tungsten alloy is 90 percent and the tungsten in thecopper-tungsten alloy is 10 percent, the copper in the copper-tungstenalloy is 40 percent and the tungsten in the copper-tungsten alloy is 60percent, the copper in the copper-tungsten alloy is 30 percent and thetungsten in the copper-tungsten alloy is 70 percent.

FIG. 4 illustrates a three-dimensional view of a net 2, 4 and traces 6.

FIG. 5a-5i illustrates the shape and structure of the traces 6. In FIG.5a , the cross-section shape of traces 6 is a circular shape. In FIG. 5d, the cross-section shape of traces 6 is a square shape. In FIG. 5g ,the cross-section shape of traces 6 is an oblong shape. In FIG. 5b , thecross-section shape of traces 6 is a circular shape and a first coveringlayer 6 a is cover on the traces 6, wherein the first covering layer 6 amay be a metal layer, such as a nickel-containing layer, azinc-containing layer, a titanium-containing layer, atantalum-containing layer, a silver-containing layer, achromium-containing layer and wherein the first covering layer 6 a maybe an anti-oxidation layer, such as an oxide-containing layer. In FIG.5e , the cross-section shape of traces 6 is a square shape and a firstcovering layer 6 a is cover on the traces 6, wherein the first coveringlayer 6 a may be a metal layer, such as a nickel-containing layer, azinc-containing layer, a titanium-containing layer, atantalum-containing layer, a silver-containing layer, achromium-containing layer and wherein the first covering layer 6 a maybe an anti-oxidation layer, such as an oxide-containing layer. In FIG.5h , the cross-section shape of traces 6 is an oblong shape and a firstcovering layer 6 a is cover on the traces 6, wherein the first coveringlayer 6 a may be a metal layer, such as a nickel-containing layer, azinc-containing layer, a titanium-containing layer, atantalum-containing layer, a silver-containing layer, achromium-containing layer and wherein the first covering layer 6 a maybe an anti-oxidation layer, such as an oxide-containing layer. In FIG.5c , the cross-section shape of traces 6 is a circular shape and asecond covering layer 6 b is cover on the first covering layer 6 a,wherein the second covering layer 6 b may be an adhesion layer, such asa nickel-containing layer, a zinc-containing layer, atitanium-containing layer, a tantalum-containing layer, asilver-containing layer, a chromium-containing layer and wherein thefirst covering layer 6 a may be an anti-oxidation layer, such as anoxide-containing layer. In FIG. 5f , the cross-section shape of traces 6is a square shape and a second covering layer 6 b is cover on the firstcovering layer 6 a, wherein the second covering layer 6 b may be anadhesion layer, such as a nickel-containing layer, a zinc-containinglayer, a titanium-containing layer, a tantalum-containing layer, asilver-containing layer, a chromium-containing layer and wherein thefirst covering layer 6 a may be an anti-oxidation layer, such as anoxide-containing layer. In FIG. 5i , the cross-section shape of traces 6is an oblong shape and a second covering layer 6 b is cover on the firstcovering layer 6 a, wherein the second covering layer 6 b may be anadhesion layer, such as a nickel-containing layer, a zinc-containinglayer, a titanium-containing layer, a tantalum-containing layer, asilver-containing layer, a chromium-containing layer and wherein thefirst covering layer 6 a may be an anti-oxidation layer, such as anoxide-containing layer.

Next, referring to FIG. 6, the traces 6 are stretched to a suitablelength L1, e.g., smaller than 5 meters, such as between 0.5 and 1 meter,or between 1 and 3 meters. In the same time, the net 4 is moved down toa suitable location. The pitch t1 between the traces 2 a, 2 b, 4 a, 4 bis greater than the diameter (or width) of traces 6.

Next, referring to FIG. 7, the traces 2 a, 2 b, 4 a and 4 b are moved tochange the pitch t1 to a pitch t2, then the traces 6 are closed up to apitch t3. The pitch t3 substantially the same with the diameter (orwidth) of the traces 2 a, 2 b, 4 a and 4 b, such as between 5 and 20micrometers, between 20 and 50 micrometers, between 30 and 80micrometers, between 20 and 100 micrometers, between 40 and 150micrometers, between 50 and 200 micrometers, between 200 and 1000micrometers or between 500 and 10000 micrometers. In the same time, maybe apply a force to stretch the traces 6, 2 a, 2 b, 4 a and 4 b and makethe traces 6 keep strength and keep the pitch t3 fixed.

Next, referring to FIG. 8, a thermal resistance layer 8 is formed onsurfaces of the net 4. The thermal resistance layer 8 may be a polymerlayer, such as a thermosetting resin, phenolic resin, epoxy resin,melamine-formaldehyde resin, polysiloxanes resin, plaster layer, whereinthe thermal resistance layer 8 has a heat deflection temperature between400 and 900° C. When a liquid thermal resistance layer 8 formed on thenet 4 and the thermal resistance layer 8 permeated the net 4 through thegaps 5, wherein the thermal resistance layer 8 cover the gaps 5 betweentraces 4 a, traces 4 b and traces 6, then curing the thermal resistancelayer 8. The thermal resistance layer 8 has a thickness between 0.05 and1 meter.

Next, referring to FIG. 9, a mold 10 is provided between the net 2 andthe net 4, wherein the mold 10 surrounds the traces 6 and on the thermalresistance layer 8. The mold 10 is hold up by a machine or a device. Themold 10 may be a metal mold, a ceramics mold or a polymer mold, whichhas a heat deflection temperature between 400° C. and 900° C. or between800° C. and 1300° C.

Next, referring to FIG. 10, a fixed layer 12 is formed on the thermalresistance layer 8, wherein the fixed layer 12 may be a glass layer or apolymer layer. When the material of the fixed layer 12 is glass, thefixed layer 12 is a high temperature liquid to form on the thermalresistance layer 8, and then the fixed layer 12 down to a suitabletemperature becomes a solid state. The fixed layer 12 has a thicknessbetween 0.01 and 1 meter. The bottom of traces 6 are fixed by the fixedlayer 12.

Next, referring to FIG. 11, the traces 6 under the net 4 are cut. A tank14 carries the mold 10, net 4 and the fixed layer 12.

Next, referring to FIG. 12, a glass layer (liquid form) 16 is formed onthe fixed layer 12. The glass layer 16 is a high temperature liquid toform on the fixed layer 12 and fill in the mold 10, and then the glasslayer 16 down to a suitable temperature becomes a solid state, whereinthe glass layer 16 has a glass transition temperature between 300° C.and 900° C., between 500° C. and 800° C., between 900° C. and 1200° C.or between 1000° C. and 1800° C. The glass layer 16 is a low meltingpoint glass material, wherein the glass layer 16 has a melting pointbetween 300° C. and 900° C., 800° C. and 1300° C., between 900° C. and1600° C., between 1000° C. and 1850° C., or between 1000° C. and 2000°C., wherein the melting point may smaller than 1500° C. The glass layer16 has a thickness greater than 0.5 meters or greater than 0.1 meter.Furthermore, there is a few bubbles or no bubble in glass layer 16, forexample, there is zero to 3 bubbles in one cubic meter of the glasslayer 16, 1 to 10 bubbles in one cubic meter of the glass layer 16, 5 to30 bubbles in one cubic meter of the glass layer 16 or 20 to 60 bubblesin one cubic meter of the glass layer 16, wherein the bubble has adiameter between 0.0001 and 0.001 centimeters, between 0.001 and 0.05centimeters, between 0.05 and 0.1 centimeters or between 0.05 and 0.5centimeters. The glass layer 16 may be remove bubbles through multiplelaminating process, squeezing process and heating process.

The glass layer 16 refers to an amorphous solid. The material of theglass layer 16 may be included soda-lime glass, boro-silicate glass,alumo-silicate glass, fluoride glasses, phosphate glasses or chalcogenglasses. For example, the composition of the soda-lime glass comprisesSiO₂ (74%), Na₂O (13%), CaO (10.5%), Al₂O₃ (1.3%), K₂O (0.3%), SO₃(0.2%), MgO (0.2%), Fe₂O₃ (0.04%), TiO₂ (0.01%), the composition of theboro-silicate glass comprises SiO₂ (81%), B₂O₃ (12%), Na₂O (4.5%), Al₂O₃(2.0%), the composition of the phosphate glasses comprises a percentageof the P₂O₅ material between 3% and 10% or between 5% and 20%.

A glass, once formed into a solid body, is capable of being softened andperhaps remitted into a liquid form. The “glass transition temperature”of a glass material is a temperature below which the physical propertiesof the glass are similar to those of a solid and above which the glassmaterial behaves like a liquid.

If a glass is sufficiently below the glass transition temperature,molecules of the glass may have little relative mobility. As a glassapproaches the glass transition temperature, the glass may begin tosoften and with increasing temperature the glass will ultimately meltinto the liquid state. Thus, a glass body may be softened to an extentsufficient to enable manipulation of the body's shape, allowing for theformation of holes or other features in the glass body. Once the desiredform is obtained, glass is usually annealed for the removal of stresses.Surface treatments, coatings or lamination may follow to improve thechemical durability (glass container coatings, glass container internaltreatment), strength (toughened glass, bulletproof glass, windshields),or optical properties (insulated glazing, anti-reflective coating).

Furthermore, the glass layer 16 may be replaced by a polymer layer. Whenthe polymer cured to a solid state. The polymer layer has an expansioncoefficient between 3 and 10 ppm/° C.

Next, referring to FIG. 13, the mold 10 and the tank 14 are removed andcut the traces 6 from net 2.

Next, referring to FIG. 14, the net 4 and the thermal resistance layer 8are removed, and then a column 8 is produced.

Next, referring to FIG. 15, the traces 6 out of the column 8 are removedand cutting the column 8 to produce multiple first substrates 20,wherein the first substrate 20 has a thickness between 20 and 100micrometers, between 50 and 150 micrometers, between 100 and 300micrometers or between 150 and 2000 micrometers or greater than 1000micrometers. The first substrates 20 may be make a planarization processusing a suitable process, such as a chemical mechanical polishing (CMP)procedure, mechanical grinding, or laser drilling

Next, referring to FIG. 16a , the first substrate 20 comprises multiplesecond substrates 22. The second substrates 22 are well-regulated anarray in the first substrate 20. Each of the second substrates hasmultiple metal plugs 21, wherein the metal plug 21 is formed from metaltraces 6. The metal plug 21 has the same material and structure withmetal trace 6.

Next, referring to FIG. 16b-16d , the metal plugs 21 may be arrangeddifferent types, such as FIG. 16b , the metal plugs 21 are arranged onthe side portions of the second substrate 22, or such as FIG. 16c , themetal plugs 21 are arranged on the side portions and center portion ofthe second substrate 22, or such as FIG. 16d , some portions of thesecond substrate 22 are not arranged the metal plugs 21.

FIG. 17a illustrates a cross-section view of the second substrate 22 andFIG. 17b -FIG. 17d illustrates a cross-section view of the metal plug21. The second substrate 22 comprise an amorphous solid glass layer/body16 and multiple metal plugs 21, wherein the amorphous solid glasslayer/body 16 having a top surface and an opposing bottom surface andthe metal plugs 21 extending through the amorphous solid glasslayer/body 16 beginning at the top surface and ending at the bottomsurface. The top surface of the metal plugs 21 are the same as thebottom surface of the metal plugs 21.

Please referring FIG. 17b , the top surface of the metal plugs 21 andthe top surface of the amorphous solid glass layer/body 16 aresubstantially coplanar. The bottom surface of the metal plugs 21 and thebottom surface of the amorphous solid glass layer/body 16 aresubstantially coplanar.

Please referring FIG. 17c , the top surface of the metal plugs 21comprises a top surface of the metal traces 6 and a top surface of thefirst covering layer 6 a are substantially coplanar with the top surfaceof the amorphous solid glass layer/body 16. The bottom surface of themetal plugs 21 comprises a bottom surface of the metal traces 6 and abottom surface of the first covering layer 6 a are substantiallycoplanar with the bottom surface of the amorphous solid glass layer/body16.

Please referring FIG. 17d , the top surface of the metal plugs 21comprises a top surface of the metal traces 6, a top surface of thefirst covering layer 6 a and a top surface of the second covering layer6 b are substantially coplanar with the top surface of the amorphoussolid glass layer/body 16. The bottom surface of the metal plugs 21comprises a bottom surface of the metal traces 6, a bottom surface ofthe first covering layer 6 a and a bottom surface of the second coveringlayer 6 b are substantially coplanar with the bottom surface of theamorphous solid glass layer/body 16.

FIG. 18a -FIG. 18t illustrates a process to form multiple traces on atop surface and a bottom surface of the first substrate 20.

Next, referring to FIG. 18a , a dielectric layer 24 is formed on the topsurface of the first substrate 20, wherein the dielectric layer 24 mayinclude or may be a layer of silicon oxide (such as SiO₂), siliconnitride (such as Si₃N₄), silicon oxynitride (such as SiON), siliconoxycarbide (such as SiOC), phosphosilicate glass (PSG), silicon carbonnitride (such as SiCN), low k dielectric layer (K between 0.5 and 3), orpolymer (such as polyimide, benzocyclobutene (BCB), polybenzoxazole(PBO), poly-phenylene oxide (PPO), epoxy, or silosane). The dielectriclayer 24 may be formed or deposited using a suitable process. Thedielectric layer 24 has a thickness between 0.3 and 5 micrometers,between 2 and 10 micrometers, between 1 and 30 micrometers or greaterthan 30 micrometers.

Next, referring to FIG. 18b , multiple openings 24 a are formed in thedielectric layer 24 to expose the metal plugs 21. The openings 24 a maybe formed in the dielectric layer 24 by a suitable process, such asetching. The opening 24 a has a width between 0.3 and 3 micrometers,between 0.5 and 8 micrometers, between 2 and 20 micrometers or between 2and 50 micrometers.

Next, referring to FIG. 18c , a first metal layer 26 is formed on thedielectric layer 24, on the metal plugs 21 and in the openings 24 a. Thefirst metal layer 26 may include an adhesion/barrier layer, such as alayer of titanium, a titanium-tungsten alloy, titanium nitride,chromium, tantalum, tantalum nitride, nickel or nickel vanadium formedusing a suitable process, such as vacuum deposition, Physical VaporDeposition (PVD), Plasma Enhanced Chemical Vapor Deposition (PECVD),sputtering process or an electroplating process, with a thickness, e.g.,between 1 nanometer and 2 micrometers, between 0.3 and 3 micrometers orbetween 0.5 and 10 micrometers.

Next, referring to FIG. 18d , a second metal layer 28 is formed on thefirst metal layer 26. The second metal layer 28 may be comprises copper,nickel, gold or aluminum formed using a suitable process, such as vacuumdeposition, Physical Vapor Deposition (PVD), Plasma Enhanced ChemicalVapor Deposition (PECVD), sputtering process or an electroplatingprocess, with a thickness, e.g., between 1 nanometer and 5 micrometers,between 1 and 5 micrometers or between 5 and 30 micrometers.

Next, referring to FIG. 18e , a photoresist layer 30 is formed on thesecond metal layer 28 by using a suitable process, such as spin coatingprocess or lamination process. Next, a photo exposure process using a 1×stepper and a development process using a chemical solution can beemployed to form multiple openings 30 a, exposing the second metal layer28, in the photoresist layer. The photoresist layer 30 may have athickness, e.g., between 3 and 50 micrometers, wherein the photoresistlayer 30 may be a positive-type photo-sensitive resist layer ornegative-type photo-sensitive resist layer.

Next, referring to FIG. 18f , remove the first metal layer 26 and thesecond metal layer 28 are under the openings 30 a by using a suitableprocess, such as an etching process.

Next, referring to FIG. 18g , remove the photoresist layer 30 by using aclean process.

Next, referring to FIG. 18h , a dielectric layer 32 is formed on thefirst dielectric layer 24 and on the second metal layer 28, wherein thedielectric layer 32 may include or may be a layer of silicon oxide (suchas SiO₂), silicon nitride (such as Si₃N₄), silicon oxynitride (such asSiON), silicon oxycarbide (such as SiOC), phosphosilicate glass (PSG),silicon carbon nitride (such as SiCN), low k dielectric layer (K between0.5 and 3), or polymer (such as polyimide, benzocyclobutene (BCB),polybenzoxazole (PBO), poly-phenylene oxide (PPO), epoxy, or silosane).The dielectric layer 32 may be formed or deposited using a suitableprocess. The dielectric layer 32 has a thickness between 0.3 and 5micrometers, between 2 and 10 micrometers, between 1 and 30 micrometersor greater than 30 micrometers.

Next, referring to FIG. 18i , multiple openings 32 a are formed in thedielectric layer 32 to expose the second metal layer 28. The openings 32a may be formed in the dielectric layer 32 by a suitable process, suchas etching. The opening 32 a has a width between 0.3 and 3 micrometers,between 0.5 and 8 micrometers, between 2 and 20 micrometers or between 2and 50 micrometers.

Next, referring to FIG. 18j , a third metal layer 34 is formed on thedielectric layer 32, on the second metal layer 28 and in the openings 32a. The third metal layer 34 may include an adhesion/barrier layer, suchas a layer of titanium, a titanium-tungsten alloy, titanium nitride,chromium, tantalum, tantalum nitride, nickel or nickel vanadium formedusing a suitable process, such as vacuum deposition, Physical VaporDeposition (PVD), Plasma Enhanced Chemical Vapor Deposition (PECVD),sputtering process or an electroplating process, with a thickness, e.g.,between 1 nanometer and 2 micrometers, between 0.3 and 3 micrometers orbetween 0.5 and 10 micrometers.

Next, referring to FIG. 18k , a fourth metal layer 36 is formed on thethird metal layer 34. The fourth metal layer 36 may be comprises copper,nickel, gold or aluminum formed using a suitable process, such as vacuumdeposition, Physical Vapor Deposition (PVD), Plasma Enhanced ChemicalVapor Deposition (PECVD), sputtering process or an electroplatingprocess, with a thickness, e.g., between 1 nanometer and 5 micrometers,between 1 and 5 micrometers or between 5 and 30 micrometers.

Next, referring to FIG. 18l , a photoresist layer 38 is formed on thefourth metal layer 36 by using a suitable process, such as spin coatingprocess or lamination process. Next, a photo exposure process using a 1×stepper and a development process using a chemical solution can beemployed to form multiple openings 38 a, exposing the fourth metal layer36, in the photoresist layer. The photoresist layer 38 may have athickness, e.g., between 3 and 50 micrometers, wherein the photoresistlayer 38 may be a positive-type photo-sensitive resist layer ornegative-type photo-sensitive resist layer.

Next, referring to FIG. 18m , remove the third metal layer 34 and thefourth metal layer 36 are under the openings 38 a by using a suitableprocess, such as an etching process.

Next, referring to FIG. 18n , remove the photoresist layer 38 by using aclean process.

Next, referring to FIG. 18o , a dielectric layer 40 is formed on thesecond dielectric layer 32 and on the fourth metal layer 36, wherein thedielectric layer 40 may include or may be a layer of silicon oxide (suchas SiO₂), silicon nitride (such as Si₃N₄), silicon oxynitride (such asSiON), silicon oxycarbide (such as SiOC), phosphosilicate glass (PSG),silicon carbon nitride (such as SiCN), low k dielectric layer (K between0.5 and 3), or polymer (such as polyimide, benzocyclobutene (BCB),polybenzoxazole (PBO), poly-phenylene oxide (PPO), epoxy, or silosane).The dielectric layer 40 may be formed or deposited using a suitableprocess. The dielectric layer 40 has a thickness between 0.3 and 5micrometers, between 2 and 10 micrometers, between 1 and 30 micrometersor greater than 30 micrometers.

Next, referring to FIG. 18p , multiple openings 40 a are formed in thedielectric layer 40 to expose the fourth metal layer 36. The openings 40a may be formed in the dielectric layer 40 by a suitable process, suchas etching. The opening 40 a has a width between 0.3 and 3 micrometers,between 0.5 and 8 micrometers, between 2 and 20 micrometers or between 2and 50 micrometers.

Next, referring to FIG. 18q , a protecting layer 42 is formed in theopenings 40 a, on the dielectric layer 40 and on the fourth metal layer36, which can protect the dielectric layer 40 not to be damaged and thefourth metal layer 36 not be damaged and oxidated.

Next, referring to FIG. 18s , repeat the processes of FIG. 18a -FIG. 18pto form the dielectric layer 24, the first metal layer 26, the secondmetal layer 28, the dielectric layer 32, the third metal layer 34, thefourth metal layer 36 and the dielectric layer 40 on the bottom surfaceof the first substrate 20.

Furthermore, referring to FIG. 18t , a passive device 44 may be formedin the first metal layer 28 and the second metal layer 36, such as aninductor, a capacitor or a resistor.

Next, referring to FIG. 18u , multiple chips 46 and chips 56 set up overthe dielectric layer 40 through a flip chip package process or awirebonding package process, wherein the chip 46 and 56 comprises may bea memory chip, such as NAND-Flash memory chip, Flash memory chip, DRAMchip, SRAM chip or SDRAM chip, a central-processing-unit (CPU) chip, agraphics-processing-unit (GPU) chip, a digital-signal-processing (DSP)chip, a baseband chip, a wireless local area network (WLAN) chip, alogic chip, an analog chip, a global-positioning-system (GPS) chip, a“Bluetooth” chip, or a chip including one or more of a CPU circuitblock, a GPU circuit block, a DSP circuit block, a memory circuit block(such as DRAM circuit block, SRAM circuit block, SDRAM circuit block,Flash memory circuit block, or NAND-Flash memory circuit block), abaseband circuit block, a Bluetooth circuit block, a GPS circuit block,a MEMS chip, a COMS image sensor device, a WLAN circuit block, and amodem circuit block, from the semiconductor wafer.

The chips 46 are set up on the dielectric layer 40 through a flip chippackage process, wherein the chip 46 comprises multiple metal pads 48and multiple metal bumps 50 formed on the metal pads 48. The metal pad48 may be an electroplated copper pad, a damascene copper pad or analuminum pad. The metal bump 50 comprises an adhesion/barrier metallayer formed on the metal pad 48, an electroplated metal layer or anelectro-less metal layer formed on the adhesion/barrier metal layer,wherein the adhesion/barrier metal layer comprises a titanium-containinglayer, a chromium-containing layer, a tantalum-containing layer or anickel layer, and the electroplated metal layer comprises a copperlayer, a gold layer, a nickel layer, a tin-containing layer, a solderlayer, a solder layer over a nickel layer and a copper layer, and theelectro-less layer comprises a copper layer, a gold layer or a nickellayer. The electroplated metal layer has a thickness between 2 and 5micrometers, between 5 and 30 micrometers or between 10 and 50micrometers. The metal bumps 50 are connected to the fourth metal layer36 exposed by the openings 40 a through a solder layer 54, wherein thesolder layer 54 is formed on the fourth metal layer 36 exposed by theopenings 40 a or is a portion of the metal bump 50. An underfill layer52 is formed between the chips 46 and the dielectric layer 40.

The chips 56 are set up over the dielectric layer 40 through a polymeradhesion layer 60, wherein the chip 56 comprises multiple metal pads 58.The metal pad 58 may be an electroplated copper pad, a damascene copperpad or an aluminum pad. Multiple metal wires 62 are connected to themetal pads 58 and the fourth metal layer 36 exposed by the openings 40a, wherein the metal wires 62 comprises a gold wire, a copper wire, ametal alloy wire, a silver-containing wire, an aluminum-containing wireor gold-copper alloy wire. An underfill layer 64 is covered the chip 45,metal wires 62 and the metal pads 58.

Multiple discrete passive components 66 set up on the dielectric layer40, such as a discrete inductor, a discrete capacitor or a discreteresistor, wherein the discrete passive component 66 comprises a multiplemetal pad 68. The discrete passive components 66 mounted on thedielectric layer 40 through a solder layer 70.

Next, referring to FIG. 18v , multiple metal bumps 72 are formed on thebottom surface of the substrate 20.

FIG. 18w is disclosed some structures of metal bump 72.

-   -   Lift side: 1^(st) type of structures of metal bump 72 comprises        an adhesion/barrier metal layer 61 formed on the metal pad 48, a        metal seed layer 63 formed on the adhesion/barrier metal layer        61, an electroplated metal layer 65 formed on the metal seed        layer 63 and a solder layer 67 formed on the electroplated metal        layer 65, wherein the adhesion/barrier metal layer 61 comprises        a titanium-containing layer, a chromium-containing layer, a        tantalum-containing layer or a nickel layer, wherein the        electroplated metal layer 65 comprises a copper layer, a gold        layer, a nickel layer, wherein the solder layer 67 can be formed        by screen plating, ball mounting, or an electroplating process,        such as gold-tin alloy, tin-silver alloy, tin-silver-copper        alloy, indium, tin-bismuth alloy, or other lead-free alloy. Lead        alloy solders can also be used but may be less desirable in some        embodiments due to toxicity considerations. The adhesion/barrier        metal layer 61 has a thickness between 0.05 and 2 micrometers.        The metal seed layer 63 has a thickness between 0.05 and 2        micrometers. The electroplated metal layer 65 has a thickness        between 1 and 5 micrometers, between 2 and 8 micrometers or        between 5 and 20 micrometers. The solder layer 67 has a        thickness between 30 and 80 micrometers, between 50 and 100        micrometers, between 80 and 150 micrometers or between 120 and        350 micrometers.    -   Right side: 2^(nd) type of structure of metal bump 72 comprises        an adhesion/barrier metal layer 61 formed on the metal pad 48, a        metal seed layer 63 formed on the adhesion/barrier metal layer        61, a first electroplated metal layer 65 formed on the metal        seed layer 63 and a second electroplated metal layer 69 formed        on the first electroplated metal layer 65, wherein the        adhesion/barrier metal layer 61 comprises a titanium-containing        layer, a chromium-containing layer, a tantalum-containing layer        or a nickel layer, wherein the first electroplated metal layer        65 comprises a copper layer, a gold layer, a nickel layer,        wherein the second electroplated metal layer 69 comprises a        copper layer, a gold layer, a nickel layer. The adhesion/barrier        metal layer 61 has a thickness between 0.05 and 2 micrometers.        The metal seed layer 63 has a thickness between 0.05 and 2        micrometers. The first electroplated metal layer 65 has a        thickness between 1 and 5 micrometers, between 2 and 4        micrometers, between 5 and 15 micrometers or between 10 and 25        micrometers. The second electroplated metal layer 69 has a        thickness between 1 and 5 micrometers, between 2 and 4        micrometers, between 10 and 30 micrometers or between 20 and 60        micrometers.

Furthermore, referring to FIG. 18x , the chips 46 may be set up on thebottom surface of the substrate 20.

Furthermore, referring to FIG. 18y , the chip 46 may be a 3D IC chip,wherein the chip 46 comprises a multiple metal pad 48 formed on the topand bottom surface. The metal pads 48 of the top surface of the chip 46are connected to the metal pads 48 of the bottom surface of the chip 46through multiple through-silicon-via metal layers. A chip 47 isconnected to the 3D IC chip 46 through the flip chip package process,wherein the chip 47 comprises multiple metal pads 49, wherein the metalpad 49 may be an electroplated copper pad, a damascene copper pad or analuminum pad. The metal pads 49 are connected to the metal pads 48through a solder layer 51.

FIG. 18y , illustrates a top view of the substrate 20. FIG. 18v -FIG.18x illustrate a cross section view of Line L-L′ in FIG. 18z . Multiplethe chips 46, the chips 56 and the passive components 66 may also beprovided in or on the substrate 20.

Next, cutting the first substrate 20 to produce multiple secondsubstrates 22.

FIG. 19a -FIG. 19j illustrates a damascene process to form the firstmetal layer 26, the second metal layer 28, the third metal layer 34 andthe fourth metal layer 36 on a top surface and a bottom surface of thefirst substrate 20.

Referring to FIG. 19a , the dielectric layers 24 in FIG. 18A include twodielectric layers 80 and 82. The dielectric layer 80 is formed on thedielectric layer 82 by a chemical vapor deposition (CVD) process or aspin-on coating process, wherein each of the dielectric layers 80 and 82may be composed of a low-K oxide layer with a thickness of between 0.3and 5 μm, and preferably of between 0.5 and 3 μm, and an oxynitridelayer on the low-K oxide layer, of a low-K polymer layer with athickness of between 0.3 and 5 μm, and preferably of between 0.5 and 3μm, and an oxynitride layer on the low-K polymer layer, of a low-K oxidelayer with a thickness of between 0.3 and 5 μm, and preferably ofbetween 0.5 and 3 μm, and a nitride layer on the low-K oxide layer, of alow-K polymer layer with a thickness of between 0.3 and 5 μm, andpreferably of between 0.5 and 3 μm, and a nitride layer on the low-Kpolymer layer, or of a low-K dielectric layer with a thickness ofbetween 0.3 and 5 μm, and preferably of between 0.5 and 3 μm, and anitride-containing layer on the low-K dielectric layer. Next, referringto FIG. 19b , a photoresist layer 84 is formed on the dielectric layer82, an opening 84 a in the photoresist layer 84 exposing the dielectriclayer 82. Next, referring to FIG. 19c , the dielectric layer 82 underthe opening 84 a is removed by a dry etching method to form a trench inthe dielectric layer 82 exposing the dielectric layer 80. Next,referring to FIG. 19d , after forming the trench in the dielectric layer82, the photoresist layer 84 is removed. Next, referring to FIG. 19e , aphotoresist layer 86 is formed on the dielectric layer 82 and on thedielectric layer 80 exposed by the trench, an opening 86 a in thephotoresist layer 86 exposing the dielectric layer 80 exposed by thetrench. Next, referring to FIG. 19f , the dielectric layer 80 under theopening 86 a is removed by a dry etching method to form a via 80 a inthe dielectric layer 80 exposing the metal plugs 21 in the substrate 20.Next, referring to FIG. 19g , after forming the via 80 a in thedielectric layer 80, the photoresist layer 86 is removed. Thereby, anopening 88 including the trench and the via 80 a is formed in thedielectric layers 82 and 80. Next, referring to FIG. 19h , anadhesion/barrier layer 90 having a thickness of between 0.1 and 3micrometers is formed on the metal plugs 21 exposed by the opening 88,on the sidewalls of the opening 88 and on the top surface of thedielectric layer 82. The adhesion/barrier layer 90 can be formed by asputtering process or a chemical vapor deposition (CVD) process. Thematerial of the adhesion/barrier layer 90 may include titanium, titaniumnitride, a titanium-tungsten alloy, tantalum, tantalum nitride, or acomposite of the abovementioned materials. For example, theadhesion/barrier layer 90 may be formed by sputtering a tantalum layeron the metallization structure exposed by the opening 88, on thesidewalls of the opening 88 and on the top surface of the dielectriclayer 82. Alternatively, the adhesion/barrier layer 90 may be formed bysputtering a tantalum-nitride layer on the metallization structureexposed by the opening 88, on the sidewalls of the opening 88 and on thetop surface of the dielectric layer 82. Alternatively, theadhesion/barrier layer 90 may be formed by forming a tantalum-nitridelayer on the metallization structure exposed by the opening 88, on thesidewalls of the opening 88 and on the top surface of the dielectriclayer 82 by a chemical vapor deposition (CVD) process. Next, referringto FIG. 19i , a seed layer 92, made of copper, having a thickness ofbetween 0.1 and 3 micrometers is formed on the adhesion/barrier layer 90using a sputtering process or a chemical vapor deposition (CVD) process,and then a copper layer 94 having a thickness of between 0.5 and 5 μm,and preferably of between 1 and 2 μm, is electroplated on the seed layer92. Next, referring to FIG. 19j , the copper layer 94, the seed layer 92and the adhesion/barrier layer 90 outside the opening 88 in thedielectric layers 82 and 80 are removed using a chemical mechanicalpolishing (CMP) process until the top surface of the dielectric layer 82is exposed to an ambient.

FIG. 20a -FIG. 20i illustrates an embossing process to form the firstmetal layer 26, the second metal layer 28, the third metal layer 34 andthe fourth metal layer 36 on a top surface and a bottom surface of thefirst substrate 20.

Referring to FIG. 20a , the metal plugs 21 are in the glass layer 16 ofthe first substrate 20, and the opening 96 a in the dielectric layer 96exposes the metal trace 6.

Referring to FIG. 20a , a polymer layer 98 can be formed on thedielectric layer 96, and at least one opening 98 a is formed in thepolymer layer 98 by patterning the polymer layer 98 to expose at leastone metal trace 6, as shown in FIG. 20b and FIG. 20c . The metal plugs21 may include a center portion exposed by an opening 98 a and aperipheral portion covered with the polymer layer 98, as shown in FIG.20b . Alternatively, the opening 98 a may expose the entire uppersurface of the metal plugs 21 exposed by the opening 96 a in thedielectric layer 96 and further may expose the upper surface of thedielectric layer 96 near the metal trace 6, as shown in FIG. 20 c.

The material of the polymer layer 98 may include benzocyclobutane (BCB),polyimide (PI), polyurethane, epoxy resin, a parylene-based polymer, asolder-mask material, an elastomer, or a porous dielectric material. Thepolymer layer 98 has a thickness of between 3 and 25 μm or between 5 and50 micrometers.

The polymer layer 98 can be formed by a spin-on coating process, alamination process or a screen-printing process. Below, the process offorming a patterned polymer layer 98 is exemplified with the case ofspin-on coating a polyimide layer on the dielectric layer 96 and thenpatterning the polyimide layer. Alternatively, the polymer layer 98 canbe formed by spin-on coating a layer of benzocyclobutane, polyurethane,epoxy resin, a parylene-based polymer, a solder-mask material, anelastomer or a porous dielectric material on the dielectric layer 96,and then patterning the layer.

Referring to FIG. 20d , an adhesion/barrier layer 100 having a thicknessof between 0.1 and 3 micrometers, and preferably between 0.5 and 2micrometers, is formed on the polymer layer 98 and on the metal trace 6.The adhesion/barrier layer 100 may be a titanium-tungsten-alloy layer,tantalum-containing layer, a chromium-containing layer or atitanium-nitride layer. The adhesion/barrier layer 100 may be formed bya sputtering method, an evaporation method, or a chemical vapordeposition (CVD) method.

Referring to FIG. 20e , a photoresist layer 102 can be formed on theadhesion/barrier layer 100 by a spin coating process or a laminationprocess. Referring to FIG. 20f , the photoresist layer 102 is patternedwith the processes of exposure, development, etc., to form a photoresistopening 102 a on the above-mentioned adhesion/barrier layer 100 over themetal plugs 21 exposed by the opening 98 a.

Referring to FIG. 20f , the photoresist layer 102 is patterned with theprocesses of exposure, development, etc., to form a photoresist opening102 a on the adhesion/barrier layer 100 over the metal plugs 21 exposedby the opening 98 a.

Referring to FIG. 20g , an electroplated metal layer 104 is formed onthe adhesion/barrier layer 100 in the opening 102 a, wherein theelectroplated metal layer 104 comprises a copper layer, gold layer, anickel layer, has a thickness between 2 and 10 micrometers, between 5and 20 micrometers or between 5 and 35 micrometers.

Referring to FIG. 20h , removing the photoresist layer 102.

Referring to FIG. 20i , the above-mentioned adhesion/barrier layer 100not under the electroplated metal layer 104 is removed with a dryetching method or a wet etching method. For example, theadhesion/barrier layer 100 made of titanium, titanium-tungsten alloy,titanium nitride, tantalum or tantalum nitride, not under theelectroplated metal layer 104 is removed with a reactive ion etching(RIE) process.

Referring to FIG. 21, the first substrate 20 is connected to a OLEDdisplay substrate through COG bonding process, wherein the OLED displaysubstrate comprises a first glass substrate 106, a second glasssubstrate 108, an organic light-emitting diodes layer 110 (or a polymerlight-emitting diodes layer, PLED layer) between the first glasssubstrate 106 and the second glass substrate 108 and multipletransparent electrodes 112. The metal bumps 72 are connected to theelectrodes 112 through an anisotropic conductive film (ACF) layer 116.The OLED display substrate comprises multiple OLED display panels. TheOLED display substrate may comprise touch screen function.

Next, cutting the first substrate 20 and the OLED display substrate toproduce multiple package units.

Furthermore, the OLED display substrate can be replaced to a MicroElectro Mechanical Systems (MEMS) display substrate. Please referring toFIG. 22, the first substrate 20 is connected to a MEMS display substratethrough COG bonding process, wherein the MEMS display substratecomprises a first glass substrate 106, a MEMS layer 109 and multipletransparent electrodes 112 formed on the first glass substrate 106. Themetal bumps 72 are connected to the electrodes 112 through ananisotropic conductive film (ACF) layer 116. The MEMS display substratecomprises multiple MEMS display panels. The MEMS display substrate maycomprise touch screen function.

Next, cutting the first substrate 20 and the MEMS display substrate toproduce multiple package units.

Referring to FIG. 23, multiple LED devices 122 are packaged on thebottom surface of the first substrate 20. The first substrate 20 isconnected to a LCD display substrate through COG bonding process,wherein the LCD display substrate comprises a first glass substrate 106,a second glass substrate 108, and a transistor liquid crystal displaylayer 111 between the first glass substrate 106 and the second glasssubstrate 108 and multiple transparent electrodes 112. The metal bumps72 are connected to the electrodes 112 through an anisotropic conductivefilm (ACF) layer 116. The LCD display substrate comprises multiple LCDdisplay panels. The LCD display substrate may comprise touch screenfunction, wherein the LCD display substrate comprise an in-cell TFT LCDsubstrate. There are multiple layers 128 between the first substrate 20and LCD display substrate, such as a diffuser sheet layer, a prism sheetlayer, a diffuser layer (or diffuser plate) and a reflector layer.

Next, cutting the first substrate 20 and the LCD display substrate toproduce multiple package units.

Those described above are the embodiments to exemplify the presentdisclosure to enable the person skilled in the art to understand, makeand use embodiments of the present disclosure. This description,however, is not intended to limit the scope of the present disclosure.Any equivalent modification and variation according to the spirit of thepresent disclosure is to be also included within the scope of the claimsstated below.

The components, steps, features, benefits and advantages that have beendiscussed are merely illustrative. None of them, nor the discussionsrelating to them, are intended to limit the scope of protection in anyway. Numerous other embodiments are also contemplated. These includeembodiments that have fewer, additional, and/or different components,steps, features, benefits and advantages. These also include embodimentsin which the components and/or steps are arranged and/or ordereddifferently.

In reading the present disclosure, one skilled in the art willappreciate that embodiments of the present disclosure can be implementedin hardware, software, firmware, or any combinations of such, and overone or more networks. Suitable software can include computer-readable ormachine-readable instructions for performing methods and techniques (andportions thereof) of designing and/or controlling the fabrication anddesign of integrated circuit chips according to the present disclosure.Any suitable software language (machine-dependent ormachine-independent) may be utilized. Moreover, embodiments of thepresent disclosure can be included in or carried by various signals,e.g., as transmitted over a wireless radio frequency (RF) or infrared(IR) communications link or downloaded from the Internet.

Unless otherwise stated, all measurements, values, ratings, positions,magnitudes, sizes, and other specifications that are set forth in thisspecification, including in the claims that follow, are approximate, notexact. They are intended to have a reasonable range that is consistentwith the functions to which they relate and with what is customary inthe art to which they pertain. The scope of protection is limited solelyby the claims. That scope is intended and should be interpreted to be asbroad as is consistent with the ordinary meaning of the language that isused in the claims when interpreted in light of this specification andthe prosecution history that follows and to encompass all structural andfunctional equivalents.

What is claimed is:
 1. A chip packaging structure comprising: a glasssubstrate having a first surface and a second surface opposed to saidfirst surface, wherein said first surface is parallel to said secondsurface, multiple metal conductors extending through said glasssubstrate beginning at said first surface and ending at said secondsurface, wherein one of said metal conductors comprises a cross-sectionsurface parallel to said first surface, wherein said cross-sectionsurface comprises a first edge, a second edge opposite to andsubstantially parallel with said first edge, a third edge and a fourthedge opposite to said third edge, wherein said first edge has a firstlength is greater than that of said third and fourth edges, wherein saidsecond edge has a second length is greater than that of said third andfourth edges, wherein said metal conductors comprises a first sidewall,a second sidewall opposite to and substantially parallel with said firstsidewall, a third sidewall and a fourth sidewall opposite to said thirdsidewall; a first metal connection structure is on said first surface,wherein said first metal connection structure comprises a firstdielectric layer on said first surface, wherein a first opening is insaid first dielectric layer and exposed a top surface of said metalconductor, a second dielectric layer on said first dielectric layer,wherein a second opening is in said second dielectric layer and exposedsaid top surface of said metal conductor, said first opening and a topsurface of said first dielectric layer, a first metal layer on said topsurface of said metal conductor, on said a sidewall of said firstopening, on said top surface of said first dielectric layer and on saidsidewall of said second opening and a second metal layer on said firstmetal layer and in said first and second openings, wherein a top surfaceof said second metal layer, a top surface of said second dielectriclayer, a top surface of said first metal layer are coplanar; a secondmetal connection structure is under said second surface, wherein saidsecond metal connection structure comprises a third dielectric layer onsaid second surface, wherein a third opening is in said third dielectriclayer and exposed a bottom surface of said metal conductor, a thirdmetal layer of said second metal connection structure on said thirddielectric layer and in said third opening, a fourth metal layer of saidsecond metal connection structure on said third metal layer and in saidthird opening and a fourth dielectric layer on said fourth metal layer,wherein a fourth opening in said fourth dielectric layer and exposedsaid fourth metal layer; a topmost dielectric layer is over said firstsurface, over said first metal connection structure and on a fifth metallayer of said first metal connection structure, wherein a fifth openingin said topmost dielectric layer and exposed said fifth metal layer; afirst metal bump is under said second metal connection structure andunder said fourth dielectric layer, wherein said first metal bumpcomprises a sixth metal layer and a seventh metal layer in said fourthopening and under said fourth dielectric layer; and a first chip is oversaid topmost dielectric layer, wherein said first chip comprises asecond metal bump connected to said first metal bump through said secondmetal layer, one of said metal conductors and said fourth metal layer.2. The chip packaging structure of claim 1, wherein said first andsecond dielectric layers comprises an oxide layer.
 3. The chip packagingstructure of claim 1, wherein said first metal layer comprises titanium.4. The chip packaging structure of claim 1, wherein said second metallayer comprises copper.
 5. The chip packaging structure of claim 1,wherein said third dielectric layers comprises an oxide layer.
 6. Thechip packaging structure of claim 1, wherein said fourth dielectriclayer comprises a polymer layer.
 7. The chip packaging structure ofclaim 1, wherein said sixth metal layer comprises a titanium.
 8. Thechip packaging structure of claim 1, wherein said seventh metal layercomprises a copper.
 9. The chip packaging structure of claim 1, whereinsaid seventh metal layer comprises a tin layer.
 10. The chip packagingstructure of claim 1 further comprising a discrete passive componentmounted under said glass substrate and connected to said second metalconnection structure.
 11. The chip packaging structure of claim 1further comprising a third metal bump under said second metal connectionstructure and under said fourth dielectric layer, wherein said secondmetal bump is connected to said first and third metal bumps through saidfirst metal connection structure, multiple said metal conductors, saidfourth metal layer.
 12. A substrate structure comprising: a glasssubstrate having a first surface and a second surface opposed to saidfirst surface, wherein said first surface is parallel to said secondsurface, multiple metal conductors extending through said glasssubstrate beginning at said first surface and ending at said secondsurface, wherein one of said metal conductors comprises a cross-sectionsurface parallel to said first surface, wherein said cross-sectionsurface comprises a first edge, a second edge opposite to andsubstantially parallel with said first edge, a third edge and a fourthedge opposite to said third edge, wherein said first edge has a firstlength is greater than that of said third and fourth edges, wherein saidsecond edge has a second length is greater than that of said third andfourth edges, wherein said metal conductors comprises a first sidewall,a second sidewall opposite to and substantially parallel with said firstsidewall, a third sidewall and a fourth sidewall opposite to said thirdsidewall; a first metal connection structure is on said first surface,wherein said first metal connection structure comprises a firstdielectric layer on said first surface, wherein a first opening is insaid first dielectric layer and exposed a top surface of said metalconductor, a second dielectric layer on said first dielectric layer,wherein a second opening is in said second dielectric layer and exposedsaid top surface of said metal conductor, said first opening and a topsurface of said first dielectric layer, a first metal layer on said topsurface of said metal conductor, on said a sidewall of said firstopening, on said top surface of said first dielectric layer and on saidsidewall of said second opening and a second metal layer on said firstmetal layer and in said first and second openings, wherein a top surfaceof said second metal layer, a top surface of said second dielectriclayer, a top surface of said first metal layer are coplanar; a secondmetal connection structure is under said second surface, wherein saidsecond metal connection structure comprises a third dielectric layer onsaid second surface, wherein a third opening is in said third dielectriclayer and exposed a bottom surface of said metal conductor, a thirdmetal layer of said second metal connection structure on said thirddielectric layer and in said third opening, a fourth metal layer of saidsecond metal connection structure on said third metal layer and in saidthird opening and a fourth dielectric layer on a bottom surface of saidfourth metal layer and on a sidewall of said third and fourth metallayers, wherein a fourth opening in said fourth dielectric layer andexposed said fourth metal layer; and a topmost dielectric layer is oversaid first surface, over said first metal connection structure and on afifth metal layer of said first metal connection structure, wherein afifth opening in said topmost dielectric layer and exposed said fifthmetal layer; and a first metal bump is under said second metalconnection structure and under said fourth dielectric layer, whereinsaid first metal bump comprises a sixth metal layer and a seventh metallayer in said fourth opening and under said fourth dielectric layer. 13.The substrate structure of claim 12 further comprising a second metalbump is under said second metal connection structure and under saidfourth dielectric layer, wherein said fourth metal layer is connected tosaid multiple said metal conductors and said first and second metalbumps.
 14. The substrate structure of claim 12, wherein said first,second and third dielectric layers comprise an oxide layer.
 15. Thesubstrate structure of claim 12, wherein said first and third metallayers comprises titanium.
 16. The substrate structure of claim 12,wherein said second and fourth metal layers comprises copper.
 17. Thesubstrate structure of claim 12, wherein said fourth dielectric layerscomprises a polymer layer.
 18. The substrate structure of claim 12,wherein said seventh metal layer comprises a copper.
 19. The substratestructure of claim 12 further comprises a discrete passive componentmounted under said glass substrate and connected to said second metalconnection structure.
 20. The substrate structure of claim 12, whereinsaid second metal connection structure comprise a passive device betweensaid fourth dielectric layer and said glass substrate.